Publications

X Author: S. Madhukar

1999

Aggarwal, S., S. Madhukar, B. Nagaraj, I.G. Jenkins, Ramamoorthy Ramesh, L. Boyer, and J.T. Jr.."Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films?."Applied Physics Letters 75 (1999) 716-718. DOI
Friessnegg, T., B. Nielsen, V.J. Ghosh, A.R. Moodenbaugh, S. Madhukar, S. Aggarwal, D.J. Keeble, E.H. Poindexter, P. Mascher, and Ramamoorthy Ramesh."Defect identification in (La, Sr)CoO3-δ using positron annihilation spectroscopy."Materials Research Society Symposium - Proceedings 541 (1999) 161-165.
Madhukar, S., S. Aggarwal, A.M. Dhote, Ramamoorthy Ramesh, S.B. Samavedam, S. Choopun, and R.P. Sharma."Pulsed laser-ablation deposition of thin films of molybdenum suicide and its properties as a conducting barrier for ferroelectric random-access memory technology."Journal of Materials Research 14 (1999) 940-947.

1998

Jenkins, I.G., T.K. Song, S. Madhukar, A.S. Prakash, S. Aggarwal, and Ramamoorthy Ramesh."Dynamics of polarization loss in (Pb, La)(Zr, Ti)O3 thin film capacitors."Applied Physics Letters 72 (1998) 3300-3302. DOI
Aggarwal, S., S.R. Perusse, S. Madhukar, T.K. Song, C.L. Canedy, Ramamoorthy Ramesh, S. Choopun, R.P. Sharma, T. Venkatesan, and S.M. Green."Rapid thermal annealing of oxide electrodes for nonvolatile ferroelectric memory structures."Journal of Electroceramics 2 (1998) 171-179. DOI
Keeble, D.J., B. Nielsen, A. Krishnan, K.G. Lynn, S. Madhukar, Ramamoorthy Ramesh, and C.F. Young."Vacancy defects in (Pb, La)(Zr, Ti)O3 capacitors observed by positron annihilation."Applied Physics Letters 73 (1998) 318-320. DOI
Keeble, D.J., A. Krishnan, T. Friessnegg, B. Nielsen, S. Madhukar, S. Aggarwal, Ramamoorthy Ramesh, and E.H. Poindexter."Vacancy defects in thin-film La0.5Sr0.5CoO3-δ observed by positron annihilation."Applied Physics Letters 73 (1998) 508-510. DOI

1997

Madhukar, S., S. Aggarwal, A.M. Dhote, Ramamoorthy Ramesh, A. Krishnan, D. Keeble, and E. Poindexter."Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes."Journal of Applied Physics 81 (1997) 3543-3547. DOI
Dhote, A.M., S. Madhukar, D. Young, T. Venkatesan, Ramamoorthy Ramesh, C.M. Cotell, and J.M. Benedetto."Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack."Journal of Materials Research 12 (1997) 1589-1594. DOI
Keeble, D.J., S. Madhukar, B. Nielsen, A. Krishnan, P. Asoka-Kumar, S. Aggarwal, Ramamoorthy Ramesh, and E.H. Poindexter."Vacancy related defects in La0.5Sr0.5CoO3-δ thin films."Materials Research Society Symposium - Proceedings 477 (1997) 229-233.

1996

Dhote, A.M., S. Madhukar, W. Wei, T. Venkatesan, Ramamoorthy Ramesh, and C.M. Cotell."Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers."Applied Physics Letters 68 (1996) 1350-1352. DOI

1995

Dhote, A.M., S. Madhukar, W. Wei, T. Venkatesan, Ramamoorthy Ramesh, and C.M. Cotell."Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers."Applied Physics Letters (1995) 1350. DOI